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th sinap  (Bruker Corporation)
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Bruker Corporation th sinap
a Molecular structure of <t>Th-SINAP-100.</t> Color code: Th green, O red, N blue, and C gray. H atoms are omitted for clarity. b Topological representation of the packing of 0D clusters. c Top view showing the π–π interactions in the structure of Th-SINAP-100. d Side view showing the π–π interactions in the structure of Th-SINAP-100.
Th Sinap, supplied by Bruker Corporation, used in various techniques. Bioz Stars score: 99/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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a Molecular structure of Th-SINAP-100. Color code: Th green, O red, N blue, and C gray. H atoms are omitted for clarity. b Topological representation of the packing of 0D clusters. c Top view showing the π–π interactions in the structure of Th-SINAP-100. d Side view showing the π–π interactions in the structure of Th-SINAP-100.

Journal: Nature Communications

Article Title: Visible colorimetric dosimetry of UV and ionizing radiations by a dual-module photochromic nanocluster

doi: 10.1038/s41467-021-23190-0

Figure Lengend Snippet: a Molecular structure of Th-SINAP-100. Color code: Th green, O red, N blue, and C gray. H atoms are omitted for clarity. b Topological representation of the packing of 0D clusters. c Top view showing the π–π interactions in the structure of Th-SINAP-100. d Side view showing the π–π interactions in the structure of Th-SINAP-100.

Article Snippet: Single crystal X-ray diffraction data of Th-SINAP-100 were collected on a Bruker D8-Venture diffractometer equipped with an IμS 3.0 Mo Kα X-ray source (λ = 0.71073 Å) and a Photon100 CMOS detector at 298 K. SCXRD study revealed the presence of large electron density within the void space of Th-SINAP-100.

Techniques:

a Photochromism of Th-SINAP-100 upon UV-, β-ray, and γ-ray irradiation. The black scale bars in photographs represent 200 μm in length. b Evolution of the solid-state UV-Vis absorption spectra of Th-SINAP-100 crystal after exposure to 0–0.04 mJ UV irradiation doses ( λ ex = 365 nm, 2 mW) at 25 °C. Inset: solid-state UV-Vis absorption spectra of Th-SINAP-100 crystal after exposure to 0.04–4.21 mJ UV irradiation dose. The UV-Vis spectra were collected on a crystal of Th-SINAP-100 from 250 to 800 nm based on the average intensities of 50 scans with a scan time of 2 ms. c Snapshots of bulk Th-SINAP-100 crystals upon 365 nm UV irradiation. d Evolution of the solid-state photoluminescence (PL) spectra of Th-SINAP-100 crystal after exposure to 0–4.21 mJ UV irradiation doses ( λ ex = 365 nm, 2 mW) at 25 °C. Inset: PL spectra of Th-SINAP-100 after exposure to 0–0.04 mJ UV irradiation doses. The PL spectra were collected on a crystal of Th-SINAP-100 from 400 to 800 nm based on the average intensities of 5 scans with a scan time of 500 ms.

Journal: Nature Communications

Article Title: Visible colorimetric dosimetry of UV and ionizing radiations by a dual-module photochromic nanocluster

doi: 10.1038/s41467-021-23190-0

Figure Lengend Snippet: a Photochromism of Th-SINAP-100 upon UV-, β-ray, and γ-ray irradiation. The black scale bars in photographs represent 200 μm in length. b Evolution of the solid-state UV-Vis absorption spectra of Th-SINAP-100 crystal after exposure to 0–0.04 mJ UV irradiation doses ( λ ex = 365 nm, 2 mW) at 25 °C. Inset: solid-state UV-Vis absorption spectra of Th-SINAP-100 crystal after exposure to 0.04–4.21 mJ UV irradiation dose. The UV-Vis spectra were collected on a crystal of Th-SINAP-100 from 250 to 800 nm based on the average intensities of 50 scans with a scan time of 2 ms. c Snapshots of bulk Th-SINAP-100 crystals upon 365 nm UV irradiation. d Evolution of the solid-state photoluminescence (PL) spectra of Th-SINAP-100 crystal after exposure to 0–4.21 mJ UV irradiation doses ( λ ex = 365 nm, 2 mW) at 25 °C. Inset: PL spectra of Th-SINAP-100 after exposure to 0–0.04 mJ UV irradiation doses. The PL spectra were collected on a crystal of Th-SINAP-100 from 400 to 800 nm based on the average intensities of 5 scans with a scan time of 500 ms.

Article Snippet: Single crystal X-ray diffraction data of Th-SINAP-100 were collected on a Bruker D8-Venture diffractometer equipped with an IμS 3.0 Mo Kα X-ray source (λ = 0.71073 Å) and a Photon100 CMOS detector at 298 K. SCXRD study revealed the presence of large electron density within the void space of Th-SINAP-100.

Techniques: Irradiation

a CIE chromaticity coordinates of Th-SINAP-100 as a function of UV irradiation dose. b Linear fittings of the intensity ratio I 532 /I 432 as a function of UV dosage. The inset is the linear fitting in the low dose range from 0 to 0.04 mJ. c Photos of Th-SINAP-100-based dosimeter. The white scale bar in photograph represents 5 mm in length. d Color matching chart prepared by irradiated Th-SINAP-100 with different γ-ray dose. e A schematic illustration of colorimetric quantification method based on RGB scale. f Linear fittings of the RGB integer (green) of Th-SINAP-100 as a function of γ-ray dose.

Journal: Nature Communications

Article Title: Visible colorimetric dosimetry of UV and ionizing radiations by a dual-module photochromic nanocluster

doi: 10.1038/s41467-021-23190-0

Figure Lengend Snippet: a CIE chromaticity coordinates of Th-SINAP-100 as a function of UV irradiation dose. b Linear fittings of the intensity ratio I 532 /I 432 as a function of UV dosage. The inset is the linear fitting in the low dose range from 0 to 0.04 mJ. c Photos of Th-SINAP-100-based dosimeter. The white scale bar in photograph represents 5 mm in length. d Color matching chart prepared by irradiated Th-SINAP-100 with different γ-ray dose. e A schematic illustration of colorimetric quantification method based on RGB scale. f Linear fittings of the RGB integer (green) of Th-SINAP-100 as a function of γ-ray dose.

Article Snippet: Single crystal X-ray diffraction data of Th-SINAP-100 were collected on a Bruker D8-Venture diffractometer equipped with an IμS 3.0 Mo Kα X-ray source (λ = 0.71073 Å) and a Photon100 CMOS detector at 298 K. SCXRD study revealed the presence of large electron density within the void space of Th-SINAP-100.

Techniques: Irradiation

PXRD patterns of Th-SINAP-100 before and after irradiation with UV, β-ray, or γ-ray.

Journal: Nature Communications

Article Title: Visible colorimetric dosimetry of UV and ionizing radiations by a dual-module photochromic nanocluster

doi: 10.1038/s41467-021-23190-0

Figure Lengend Snippet: PXRD patterns of Th-SINAP-100 before and after irradiation with UV, β-ray, or γ-ray.

Article Snippet: Single crystal X-ray diffraction data of Th-SINAP-100 were collected on a Bruker D8-Venture diffractometer equipped with an IμS 3.0 Mo Kα X-ray source (λ = 0.71073 Å) and a Photon100 CMOS detector at 298 K. SCXRD study revealed the presence of large electron density within the void space of Th-SINAP-100.

Techniques: Irradiation

a EPR spectra of Th-SINAP-100 before and after irradiation. b Optimized structures of the experimentally synthesized complex and selected simplified models of Th-SINAP-100 (TS). c Orbital diagrams of the 364 nm electron transitions for TS-d1 from the TD-DFT calculations. d The formation of excimer (TS-TS)* that is stabilized by charge transfer, along with the light emitted by (TS−TS)* and TS* + TS.

Journal: Nature Communications

Article Title: Visible colorimetric dosimetry of UV and ionizing radiations by a dual-module photochromic nanocluster

doi: 10.1038/s41467-021-23190-0

Figure Lengend Snippet: a EPR spectra of Th-SINAP-100 before and after irradiation. b Optimized structures of the experimentally synthesized complex and selected simplified models of Th-SINAP-100 (TS). c Orbital diagrams of the 364 nm electron transitions for TS-d1 from the TD-DFT calculations. d The formation of excimer (TS-TS)* that is stabilized by charge transfer, along with the light emitted by (TS−TS)* and TS* + TS.

Article Snippet: Single crystal X-ray diffraction data of Th-SINAP-100 were collected on a Bruker D8-Venture diffractometer equipped with an IμS 3.0 Mo Kα X-ray source (λ = 0.71073 Å) and a Photon100 CMOS detector at 298 K. SCXRD study revealed the presence of large electron density within the void space of Th-SINAP-100.

Techniques: Irradiation, Synthesized